switchmode npn bipolar power transistor for switching power supply applications the mje18002 have an applications specific stateoftheart die designed for use in 220 v line operated switchmode power supplies and electronic light ballasts. these high voltage/high speed transistors offer the following: ? improved efficiency due to low base drive requirements: high and flat dc current gain h fe fast switching no coil required in base circuit for turnoff (no current tail) ? tight parametric distributions are consistent lottolot ? standard to220 maximum ratings rating symbol mje18002 unit collectoremitter sustaining voltage v ceo 450 vdc collectoremitter breakdown voltage v ces 1000 vdc emitterbase voltage v ebo 9.0 vdc collector current continuous peak(1) i c i cm 2.0 5.0 adc base current continuous peak(1) i b i bm 1.0 2.0 adc total device dissipation (t c = 25 c) derate above 25 c p d 50 0.4 watts w/ c operating and storage temperature t j , t stg 65 to 150 c thermal characteristics rating symbol mje18002 unit thermal resistance junction to case junction to ambient r q jc r q ja 2.5 62.5 c/w maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds t l 260 c preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 5 1 publication order number: mje18002/d mje18002 power transistor 2.0 amperes 1000 volts 50 watts case 221a09 to220ab mje18002 * *on semiconductor preferred device style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
mje18002 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter sustaining voltage (i c = 100 ma, l = 25 mh) v ceo(sus) 450 vdc collector cutoff current (v ce = rated v ceo , i b = 0) i ceo 100 m adc collector cutoff current (v ce = rated v ces , v eb = 0) t c = 125 c collector cutoff current (v ce = 800 v, v eb = 0) t c = 125 c i ces 100 500 100 m adc emitter cutoff current (v eb = 9.0 vdc, i c = 0) i ebo 100 m adc on characteristics baseemitter saturation voltage (i c = 0.4 adc, i b = 40 madc) baseemitter saturation voltage (i c = 1.0 adc, i b = 0.2 adc) v be(sat) 0.825 0.92 1.1 1.25 vdc collectoremitter saturation voltage (i c = 0.4 adc, i b = 40 madc) @ t c = 125 c (i c = 1.0 adc, i b = 0.2 adc) @ t c = 125 c v ce(sat) 0.2 0.2 0.25 0.3 0.5 0.5 0.5 0.6 vdc dc current gain (i c = 0.2 adc, v ce = 5.0 vdc) @ t c = 125 c dc current gain (i c = 0.4 adc, v ce = 1.0 vdc) @ t c = 125 c dc current gain (i c = 1.0 adc, v ce = 1.0 vdc) @ t c = 125 c dc current gain (i c = 10 madc, v ce = 5.0 vdc) h fe 14 11 11 6.0 5.0 10 27 17 20 8.0 8.0 20 34 dynamic characteristics current gain bandwidth (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 mhz) f t 13 mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob 35 60 pf input capacitance (v eb = 8.0 v) c ib 400 600 pf dynamic saturation: d t i d10 d i c = 0.4 a i b1 =40ma 1.0 m s @ t c = 125 c v ce(dsat) 3.5 8.0 vdc determined 1.0 m s and 3.0 m s after rising i b1 reach 0.9 final i b1 i b1 = 40 ma v cc = 300 v 3.0 m s @ t c = 125 c 1.5 3.8 reach 0 . 9 final i b1 (see figure 18) i c = 1.0 a i b1 =02a 1.0 m s @ t c = 125 c 8.0 14 i b1 = 0.2 a v cc = 300 v 3.0 m s @ t c = 125 c 2.0 7.0 (1) pulse test: pulse width = 5.0 ms, duty cycle 10%. (2) proper strike and creepage distance must be provided.
mje18002 http://onsemi.com 3 electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit switching characteristics: resistive load (d.c. 10%, pulse width = 20 m s) turnon time i c = 0.4 adc i b1 = 40 madc i 02ad @ t c = 125 c t on 200 130 300 ns turnoff time b1 i b2 = 0.2 adc v cc = 300 v @ t c = 125 c t off 1.2 1.5 2.5 m s turnon time i c = 1.0 adc i b1 = 0.2 adc i 05ad @ t c = 125 c t on 85 95 150 ns turnoff time b1 i b2 = 0.5 adc v cc = 300 v @ t c = 125 c t off 1.7 2.1 2.5 m s switching characteristics: inductive load (v clamp = 300 v, v cc = 15 v, l = 200 m h) fall time i c = 0.4 adc, i b1 = 40 madc, i b2 = 0.2 adc @ t c = 125 c t fi 125 120 200 ns storage time b2 @ t c = 125 c t si 0.7 0.8 1.25 m s crossover time @ t c = 125 c t c 110 110 200 ns fall time i c = 1.0 adc, i b1 = 0.2 adc, i b2 = 0.5 adc @ t c = 125 c t fi 110 120 175 ns storage time b2 @ t c = 125 c t si 1.7 2.25 2.75 m s crossover time @ t c = 125 c t c 200 250 300 ns fall time i c = 0.4 adc, i b1 = 50 madc, i b2 = 50 madc @ t c = 125 c t fi 140 185 200 ns storage time b2 @ t c = 125 c t si 2.2 2.5 3.0 m s crossover time @ t c = 125 c t c 140 220 250 ns
mje18002 http://onsemi.com 4 c, capacitance (pf) 0 1 2 0.001 0.010 0.100 1.000 h fe , dc current gain 1 10 100 0.01 0.10 1.00 10.00 figure 1. dc current gain @ 1 volt 1 10 100 0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.01 0.10 1.00 10.00 1 10 100 1000 1 10 100 1000 typical static characteristics t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 h fe , dc current gain v ce , voltage (volts) v ce , voltage (volts) v be , voltage (volts) 0.01 0.10 1.00 10.00 i c , collector current (amps) v ce = 1 v t j = 125 c t j = 25 c i c , collector current (amps) figure 2. dc current gain @ 5 volts v ce = 5 v t j = 125 c t j = 25 c t j = -20 c 0.01 0.10 1.00 10.0 0 0.001 0.010 0.100 1.000 i b , base current (ma) figure 3. collector saturation region t j = 25 c i c = 0.2 a 0.4 a 1 a 1.5 a 2 a i c , collector current (amps) figure 4. collectoremitter saturation voltage i c /i b = 10 i c /i b = 5 0.01 0.10 1.00 10.00 0.01 0.10 1.00 10.00 i c , collector current (amps) figure 5. baseemitter saturation region t j = 25 c t j = 125 c 1 10 100 1000 v ce , collector-emitter (volts) figure 6. capacitance c ib c ob t j = 25 c f = 1 mhz
mje18002 http://onsemi.com 5 h fe , forced gain t si , storage time (ns) i c , collector current (amps) 0 500 1000 1500 2000 2500 579111315 0 500 1000 1500 2000 2500 3000 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 500 1000 1500 2000 2500 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 350 400 450 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 100 200 300 400 500 600 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 typical switching characteristics (i b2 = i c /2 for all switching) t, time (ns) t, time (ns) t, time (ns) t, time (ns) t, time (ns) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 7. resistive switching, t on i c /i b = 5 i c /i b = 10 t j = 125 c t j = 25 c i b(off) = i c /2 v cc = 300 v pw = 20 m s 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 8. resistive switching, t off i b(off) = i c /2 v cc = 300 v pw = 20 m s t j = 25 c t j = 125 c i c /i b = 10 i c /i b = 5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 figure 9. inductive storage time, t si i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c i c /i b = 5 i c /i b = 10 579111315 figure 10. inductive storage time t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h i c = 1 a i c = 0.4 a i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c t c t fi t c t fi 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 11. inductive switching, t c and t fi , i c /i b = 5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c , collector current (amps) figure 12. inductive switching, t c and t fi , i c /i b = 10 i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h t j = 25 c t j = 125 c t c t fi t c t fi
mje18002 http://onsemi.com 6 0.01 0.10 1.00 10.00 10 100 1000 60 80 100 120 140 160 180 56789101112131415 0.0 0.2 0.4 0.6 0.8 1.0 20 40 60 80 100 120 140 160 power derating factor 0.0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 1200 50 70 90 110 130 150 170 190 210 230 250 56789101112131415 there are two limitations on the power handling ability of a tran- sistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 15 is based on t c = 25 c; t j (pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c > 25 c. second break- down limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on figure 17. t j (pk) may be calculated from the data in figures 20 and no tag. at any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. for inductive loads, high voltage and current must be sustained simultaneously during turnoff with the base to emitter junction reverse biased. the safe level is specified as a reverse biased safe operating area (figure 16). this rating is verified under clamped conditions so that the device is never subjected to an ava- lanche mode. t fi , fall time (ns) t c , crossover time (ns) i c , collector current (amps) i c , collector current (amps) v ce , collector-emitter voltage (volts) typical switching characteristics (i b2 = i c /2 for all switching) 5 6 7 8 9 10 11 12 13 14 15 h fe , forced gain figure 13. inductive fall time t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h i c = 1 a 56 789101112131415 h fe , forced gain figure 14. inductive crossover time guaranteed safe operating area information i c = 1 a i c = 0.4 a i c = 0.4 a t j = 25 c t j = 125 c i b(off) = i c /2 v cc = 15 v v z = 300 v l c = 200 m h 10 100 1000 v ce , collector-emitter voltage (volts) figure 15. forward bias safe operating area 1 m s 10 m s 50 m s 1ms 5ms dc (mje18002) 0 200 400 600 800 1000 1200 figure 16. reverse bias switching safe operating area t c 125 c i c /i b 4 l c = 500 m h v be(off) = 0.5 v 0 v -1.5 v 20 40 60 80 100 120 160 140 t c , case temperature ( c) figure 17. forward bias power derating second breakdown derating thermal derating
mje18002 http://onsemi.com 7 -5 -4 -3 -2 -1 0 1 2 3 4 5 012345678 time v ce volts i b 1 m s 3 m s 90% i b dyn 1 m s dyn 3 m s 10 9 8 7 6 5 4 3 2 1 0 012 34567 8 time i b i c t si v clamp 10% v clamp 90% i b 1 10% i c t c 90% i c t fi figure 18. dynamic saturation voltage measurements figure 19. inductive switching measurements table 1. inductive load switching drive circuit +15 v 1 m f 150 w 3 v 100 w 3 v mpf930 +10 v 50 w common -v off 500 m f mpf930 mtp8p10 mur105 mje210 mtp12n10 mtp8p10 150 w 3 v 100 m f i out a rb1 rb2 1 m f i c peak v ce peak v ce i b i b 1 i b 2 v(br)ceo(sus) l = 10 m h rb2 = v cc = 20 volts i c (pk) = 100 ma inductive switching l = 200 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 rbsoa l = 500 m h rb2 = 0 v cc = 15 volts rb1 selected for desired i b 1 0.01 0.10 1.00 0.01 0.10 1.00 10.00 100.00 1000. 0 t, time (ms) r(t) transient thermal resistance (normalized) 0.1 single pulse 0.02 0.05 0.2 0.5 r q jc (t) = r(t) r q jc r q jc = c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r q jc (t) duty cycle, d = t 1 /t 2 t 1 t 2 p (pk) typical thermal response figure 20. typical thermal response (z q jc (t)) for mje18002
mje18002 http://onsemi.com 8 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mje18002/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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